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| 2SK3646-01L,S,SJ FUJI POWER MOSFET 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol VDS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Ratings 100 70 41 164 30 41 204.7 20 5 1.67 150 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W C C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=146H, Vcc=48V,Tch=25C, See to Avalanche Energy Graph *3 IF< -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C *4 VDS <100V = = = = Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr *2 Tch <150C = *5 VGS=-30V Electrical characteristics (Tc =25C unless otherwise specified) Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=100V VGS=0V VDS=80V VGS=0V VGS=30V VDS=0V ID=15A VGS=10V ID=15A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 VCC=50V ID=30A VGS=10V L=146H Tch=25C IF=30A VGS=0V Tch=25C IF=30A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C 10 34 18 1110 280 22 16 23 31 16 32 13 9 1.10 0.1 0.38 Min. 100 3.0 Typ. Max. 5.0 25 250 100 44 1665 420 33 24 35 47 24 48 20 14 1.65 Units V V A nA m S pF 9 ns nC 41 A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.833 75.0 Units C/W C/W www.fujielectric.co.jp/denshi/scd 1 2SK3646-01L,S,SJ Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 200 600 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V IAS=17A 175 500 150 400 125 IAS=25A PD [W] 100 EAS [mJ] 300 IAS=41A 200 75 50 100 25 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 120 20V 100 10V 80 10 100 Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID [A] 60 8V 7.5V 20 7.0V 6.5V 6.0V VGS=5.5V 10 12 ID[A] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 40 0 VDS [V] VGS[V] P4 Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 0.18 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C VGS= 6.5V7.0V 7.5V 8V 0.15 6.0V RDS(on) [ ] 10 0.12 10V 0.09 gfs [S] 1 0.06 20V 0.03 0.1 0.1 0.00 1 10 100 0 20 40 60 80 100 120 ID [A] ID [A] 2 2SK3646-01L,S,SJ FUJI POWER MOSFET 100 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V 7.0 6.5 6.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 80 5.5 5.0 max. RDS(on) [ m ] VGS(th) [V] 4.5 4.0 3.5 3.0 min. 60 max. 40 typ. 2.5 2.0 20 1.5 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=30A, Tch=25C 10 14 12 10 0 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 Ciss VGS [V] 8 6 Vcc= 50V C [nF] Coss 10 -1 4 2 Crss 0 0 10 20 30 40 50 10 -2 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10 tf 10 10 2 IF [A] td(off) t [ns] td(on) 10 1 1 tr 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3646-01L,S,SJ Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25C,Vcc=48V FUJI POWER MOSFET 10 3 Avalanche Current I AV [A] 10 2 Single Pulse 10 1 10 0 10 -8 10 -1 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] Outline Drawings (mm) Type(L) Type(S) Type(SJ) 4 1 23 1 42 3 1 23 1 2 3 http://www.fujielectric.co.jp/denshi/scd/ 4 |
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